BEC101 Fundamentals of Electronics Engineering Important Questions 2026 (AKTU)
Repeat analysis + most-asked questions, unit-wise
What we did: built from all 8 AKTU Fundamentals of Electronics Engineering papers (2021-22 (Sem 1)–2025-26): 184 questions grouped into 107 distinct questions, 35 of which were asked in more than one paper.
- of marks were repeat questions
- 50%
- of marks were repeat questions
- questions asked in 2+ papers
- 35
- questions asked in 2+ papers
- papers analysed (2021-22 (Sem 1)–2025-26)
- 8
- papers analysed (2021-22 (Sem 1)–2025-26)
- units, mapped to current syllabus
- 5
- units, mapped to current syllabus
How much of the paper repeats?
- Repeats are real: when we checked each newer BEC101 paper against the papers before it, on average 50% of its marks were questions already asked in an earlier paper.
- 2022-23 paper: 43% of marks were repeats (6 of 9 repeated questions were in our top list).
- 2023-24 (Sem 1) paper: 46% of marks were repeats (7 of 9 repeated questions were in our top list).
- 2023-24 (Sem 2) paper: 45% of marks were repeats (4 of 9 repeated questions were in our top list).
- 2024-25 (Sem 1) paper: 52% of marks were repeats (3 of 12 repeated questions were in our top list).
- 2024-25 (Sem 2) paper: 47% of marks were repeats (5 of 11 repeated questions were in our top list).
- 2025-26 paper: 69% of marks were repeats (7 of 14 repeated questions were in our top list).
- Topic weightage is a guide, not a guarantee: our Tier 1 + Tier 2 topics covered 69% of the next paper's marks — picking the same number of topics at random would have covered about 47%.
Across 10 subjects and 23 papers we tested, 43% of marks repeated earlier questions on average.
1.Unit-wise most-asked questions
Ranked by how many papers asked them, then by how recently. Click a paper to open it.
Unit 1: Hours
24% of past marks| Question | Asked |
|---|---|
| (i) Explain the working of p-n junction diode and draw its V-I Characteristics. (ii) Sketch the output voltage waveform for the given circuit. Assume ideal diode used. | Asked 3× |
| Write difference between half wave and Full wave (Centre tap) rectifiers. Draw a neat circuit diagram of bridge rectifier and explain its operation with output waveforms. Derive the average value of current. | Asked 3× |
| Compare Avalanche and Zener breakdown | Asked 3× |
| Determine and draw the output voltage of given network (see original paper) | Asked 3× |
Unit 2: Bipolar Junction Transistor
18% of past marks| Question | Asked |
|---|---|
| Describe the construction and working of N-channel depletion type MOSFET along with their transfer characteristics. | Asked 4× |
| Write the only 5 differences between BJT and JFET. Draw and explain the construction and working of N-channel JFET with suitable diagram and also draw its characteristic graphs. | Asked 3× |
| Discuss the working of JFET and also discuss input and output characteristics of JFET | Asked 3× |
| Draw and explain the working of the P-N-P Transistor in common-base (CB) configuration with its characteristic graphs | Asked 3× |
Unit 3: Operational Amplifiers
19% of past marks| Question | Asked |
|---|---|
| Describe the structure of an operational amplifier using a block diagram and explain each stage in detail. Draw the circuit diagram of differential amplifier using op-amp and find out the expression for output voltage. | Asked 6× |
| Determine the output voltage of the given following networks. (For figure-1 V1 = 0.2 V and V2 = 0.5 V) (For figure-2 V1 = 10 V and V2 = 15 V) Fig-1 Fig-2 | Asked 3× |
| Define CMRR, Slew Rate and PSRR of Operational Amplifier. | Asked 3× |
| Design and explain the working of an inverting and non-inverting amplifier. Also derive the gain expressions | Asked 2× |
Unit 4: Digital Electronics
20% of past marks| Question | Asked |
|---|---|
| Simplify the function F = ∑m(0,3,5,7,8,9,10,12,13) + ∑d(1,6,11,14) using K-map and also implement the simplified expression using basic gates only. | Asked 8× |
| Determine base of the following: (i) (211)x = (152)8 (ii) (193)x = (623)8 | Asked 4× |
| Why is NAND gate called a 'universal gate'? Realize NOT gate using NAND gate only | Asked 4× |
| (i) Define universal logic Gates. Realize XOR, XNOR gates using NAND and NOR gate. (ii) Prove the following Boolean functions: AB + ABC + A B̅ = A and A B̅ + Ā B + AB + Ā B̅ = 1. | Asked 3× |
Unit 5: Introduction to Wireless Communication
19% of past marks| Question | Asked |
|---|---|
| (i) Define Modulation and also Listed the need of modulation in communication. (ii) When an AM broadcast transmitter is 60% modulated then its antenna current is 10 A, what will be the antenna current when the modulation depth is increased by 70%? | Asked 5× |
| Explain basic elements of Satellite communication system with help of suitable diagrams | Asked 3× |
| In digital wireless systems, how does frequency reuse improve spectral efficiency? | Asked 2× |
| Derive the transmission efficiency and total power of amplitude modulated wave assuming message and carrier wave as sinusoidal wave | Asked 2× |
2.Topic weightage: which topics carry the marks
Blue = Tier 1 + Tier 2 (topics that carried ~80% of past marks). Grey = the rest. It shows where marks have gone, not a promise of what comes next.
| Topic | Papers | Share |
|---|---|---|
| Amplitude Modulation · Unit 5 · Tier 1 | 7/8 | 9.6% |
| Op-Amp Basics · Unit 3 · Tier 1 | 8/8 | 8.9% |
| K-Map Minimization · Unit 4 · Tier 1 | 8/8 | 6.4% |
| Half and Full Wave Rectification · Unit 1 · Tier 1 | 7/8 | 5.8% |
| Basic and Universal Gates · Unit 4 · Tier 1 | 7/8 | 5.2% |
| Clippers and Clampers · Unit 1 · Tier 1 | 5/8 | 4.7% |
| JFET Construction and Characteristics · Unit 2 · Tier 1 | 8/8 | 4.7% |
| Number System Representation · Unit 4 · Tier 1 | 6/8 | 4.5% |
| MOSFET Depletion Type · Unit 2 · Tier 1 | 6/8 | 3.7% |
| Boolean Algebra Simplification · Unit 4 · Tier 2 | 5/8 | 3.5% |
| V-I Characteristics · Unit 1 · Tier 2 | 5/8 | 3.4% |
| Need for Modulation · Unit 5 · Tier 2 | 5/8 | 3.2% |
| Satellite and Radar Communication · Unit 5 · Tier 2 | 6/8 | 3.2% |
| Special Purpose Two-Terminal Devices · Unit 1 · Tier 2 | 5/8 | 2.9% |
| Common Base Configuration · Unit 2 · Tier 2 | 4/8 | 2.7% |
| Transistor Construction and Operation · Unit 2 · Tier 2 | 4/8 | 2.5% |
| Integrator and Differentiator · Unit 3 · Tier 2 | 3/8 | 2% |
| Differential Mode Operation · Unit 3 · Tier 2 | 4/8 | 2% |
| Inverting Amplifier · Unit 3 · Tier 2 | 3/8 | 1.9% |
| Voltage-Multiplier Circuits · Unit 1 · Tier 3 | 3/8 | 1.9% |
| Common Emitter Configuration · Unit 2 · Tier 3 | 2/8 | 1.7% |
| Zener and Avalanche Breakdown · Unit 1 · Tier 3 | 4/8 | 1.7% |
| Wireless Communication Overview · Unit 5 · Tier 3 | 3/8 | 1.6% |
| Common Collector Configuration · Unit 2 · Tier 3 | 2/8 | 1.5% |
| Common-Mode Operation · Unit 3 · Tier 3 | 3/8 | 1.5% |
| Depletion Layer · Unit 1 · Tier 3 | 3/8 | 1.5% |
| Summing Amplifier · Unit 3 · Tier 3 | 2/8 | 1.4% |
| Zener Shunt Regulator · Unit 1 · Tier 3 | 2/8 | 1.3% |
| MOSFET Enhancement Type · Unit 2 · Tier 3 | 2/8 | 1.2% |
| Communication System Elements · Unit 5 · Tier 3 | 1/8 | 0.8% |
| Cellular Communication · Unit 5 · Tier 3 | 2/8 | 0.7% |
| Binary Arithmetic · Unit 4 · Tier 3 | 2/8 | 0.7% |
| Non-Inverting Amplifier · Unit 3 · Tier 3 | 1/8 | 0.6% |
| Amplification Action · Unit 2 · Tier 3 | 1/8 | 0.4% |
| Unity Follower · Unit 3 · Tier 3 | 1/8 | 0.4% |
| Ideal and Practical Diodes · Unit 1 · Tier 3 | 1/8 | 0.3% |
3.Paper pattern (2025-26)
| Section | Questions | Rule |
|---|---|---|
| A | 7 × 2 marks | Attempt all |
| B | 5 × 7 marks | Attempt any 3 |
| C | 10 × 7 marks | Attempt any 1 |
4.In the syllabus, never asked yet
Low priority, but read them once — a new paper can always start here.
- Diode Equivalent Circuits · U1
- JFET Transfer Characteristic · U2
- Comparators · U3
- Signal Representation and Analysis · U5
- Electromagnetic Spectrum · U5
- AM Demodulation Techniques · U5
- Cellular Generations and Standards · U5
5.Study order
- 1Amplitude Modulation (Unit 5, Tier 1)
- 2Op-Amp Basics (Unit 3, Tier 1)
- 3K-Map Minimization (Unit 4, Tier 1)
- 4Half and Full Wave Rectification (Unit 1, Tier 1)
- 5Basic and Universal Gates (Unit 4, Tier 1)
- 6Clippers and Clampers (Unit 1, Tier 1)
- 7JFET Construction and Characteristics (Unit 2, Tier 1)
- 8Number System Representation (Unit 4, Tier 1)
- 9MOSFET Depletion Type (Unit 2, Tier 1)
- 10Boolean Algebra Simplification (Unit 4, Tier 2)
- 11V-I Characteristics (Unit 1, Tier 2)
- 12Need for Modulation (Unit 5, Tier 2)
- 13Satellite and Radar Communication (Unit 5, Tier 2)
- 14Special Purpose Two-Terminal Devices (Unit 1, Tier 2)
- 15Common Base Configuration (Unit 2, Tier 2)
- 16Transistor Construction and Operation (Unit 2, Tier 2)
- 17Integrator and Differentiator (Unit 3, Tier 2)
- 18Differential Mode Operation (Unit 3, Tier 2)
- 19Inverting Amplifier (Unit 3, Tier 2)
FAQ
Which units of BEC101 carry the most marks?
Unit 1 (Hours, 24% of past marks) and Unit 4 (Digital Electronics, 20% of past marks).
Do AKTU Fundamentals of Electronics Engineering questions repeat?
Yes. On average 50% of the marks in each newer BEC101 paper came from questions already asked in an earlier paper, and 35 questions have appeared in more than one paper.
How is this list made?
Every question from the 8 papers (2021-22 (Sem 1)–2025-26) was mapped to the current AKTU syllabus and grouped with the same question from other years. Questions are ranked by how many papers they appeared in, then by how recently.
Study this subject
Note: this is based on past AKTU papers, not a guarantee. Questions are mapped to the current syllabus; topics that are no longer in the syllabus are left out.