B.TechSemester 82021-22Modeling Of Field Effect Nano DevicesKOE095
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Modeling Of Field Effect Nano Devices (KOE095) - AKTU Question Paper 2021-22

B.Tech · Semester 8 · Free PDF Download

This is the official AKTU Modeling Of Field Effect Nano Devices Previous Year Question Paper for B.Tech Semester 8, academic session 2021-22. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech
Semester:Semester 8
Session:2021-22
University:AKTU / UPTU

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Questions Asked in 2021-22

Modeling Of Field Effect Nano Devices (KOE095) — extracted question text

Section AAttempt All of the following Questions in brief Marks (10X2=20) CO
  • a
    What is a nano-device?
  • c
    What do you mean by transistor?
  • g
    What is a VT device?
  • h
    Explain RF circuit. Q1(i) What do you mean by semiconductor? Q1(j) What is a gate stack?
Section BAttempt ANY THREE of the following Questions Marks (3X10=30) CO
  • a
    What do you mean by MOSFET? Discuss the MOSFET scaling in detail?
  • b
    Define electrostatics. Discuss 1D and 2d MOS electrostatics in detail
  • c
    Write a note on the Carbon nanotube
  • d
    What is ballistic nano transistor? Discuss a general modal for ballistic nano transistor
  • e
    What is the impact of device performance on digital circuits? Discuss
Section CAttempt ANY ONE following Question Marks (1X10=10) CO
  • a
    What are multi gate transistors? Discuss any two types of such transistors with their applications
  • b
    Discuss the concept of quantum effects in detail
Section CAttempt ANY ONE following Question Marks (1X10=10) CO
  • a
    What do you understand by asymmetry effect? Discuss in detail
  • b
    Explain the following: (i) Double gate MOS system., (ii) Scattering
Section CAttempt ANY ONE following Question Marks (1X10=10) CO
  • a
    Write the note on the following: (i) Evaluation of I-V characteristics., (ii) Band structure of Graphene
  • b
    What do you understand by single electron charging? Discuss in detail
Section CAttempt ANY ONE following Question Marks (1X10=10) CO
  • a
    Discuss about the Radiation effects in SOI MOSFETs
  • b
    Explain the following: (i) Scaling effects. (ii) FET’s
Section CAttempt ANY ONE following Question Marks (1X10=10) CO
  • a
    Write a note on the SRAM design with detail diagram
  • b
    (i) Explain operational amplifier. (ii) Successive approximation DAC

Question text is extracted from the official AKTU question paper PDF above. Check the original PDF for equations, diagrams and complete wording. Extracted: 2026-08-23.

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