B.TechSemester 82024-25Modeling Of Field Effect Nano DevicesKOE095

Modeling Of Field Effect Nano Devices (KOE095) - AKTU Question Paper 2024-25

B.Tech · Semester 8 · Free PDF Download

This is the official AKTU Modeling Of Field Effect Nano Devices Previous Year Question Paper for B.Tech Semester 8, academic session 2024-25. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech

Semester:Semester 8

Session:2024-25

University:AKTU / UPTU

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Questions Asked in 2024-25

Modeling Of Field Effect Nano Devices (KOE095) — complete question paper · 100 marks · 3 Hours

Section AAttempt all questions in brief. 2 x 10 = 20

a
Define short channel effe cts and mention one challenge in scaling
b
W h a t a r e m u l t igate transistors? Name at least two types
c
State the difference between 1D and 2D MOS electrostatics
d
What is electron tunneling in the context of double-gate MOS systems?
e
Define degenerate and non-dege nerate carrier statistics
f
Write a short note on carbon nanotube band structure
g
What are total ionizing dose e ffects in SOI MOSFETs?
h
Define single event effect s in scaled devices. 4 K2 i What is transconductance in analo g circuits? 5 K2 j Define the term 'flicker noise' and ex plain its impact

Section BAttempt any three of the following: 10 x 3 = 30

a
Ex plain SOI MOSFET and compare it with bulk MOSFETs
b
Discuss the role of gate volta ge and oxide thickness in double gate MOS systems
c
Compare and contrast the I-V characteristics for degenerate a nd nondegenerate carrier statistics
d
Describe radiation effects in m ultigate devices with examples
e
Discuss operational amplifier design considerations in nano-s cale analog circuits

Section CAttempt any one part of the following: 10 x 1 = 10

a
Ex plain channel and source/drain engineering in scaled MOSFETs
b
Discuss strain en gineering and its effect on MOSFET performance
a
Explain the semiconductor thickness effect in double gate MOS systems
b
Describe the impact of 2D conf inement on carrier mobility and scattering
a
Describe the working of carbon nanotube MOSFETs with energy b and diagrams
b
Explain the model and principles behind single electron transistors
a
Describe the types of radiation effects and mitigation strate gies in nano MOSFETs
b
Discuss scaling limitations due to single event effects and p ropose solutions
a
Describe design strategies for low-leakage SRAMs in nano-scale digital circuits
b
Explain the working of a successive approximation DAC in a mi xed- signal environment

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.

Repeated Questions — KOE095

Questions that appeared in more than one session, found by comparing 4 years of Modeling Of Field Effect Nano Devices papers (2021-22, 2022-23, 2023-24, 2024-25)

Write a short note on carbon nanotube band structure

Appeared in: 2021-22 · 2024-25

Compare and contrast the I-V characteristics for degenerate a nd nondegenerate carrier statistics

Appeared in: 2023-24 · 2024-25

Modeling Of Field Effect Nano Devices — Other Year Papers

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