B.TechSemester 82021-22Modeling Of Field Effect Nano DevicesKOE095

Modeling Of Field Effect Nano Devices (KOE095) - AKTU Question Paper 2021-22

B.Tech · Semester 8 · Free PDF Download

This is the official AKTU Modeling Of Field Effect Nano Devices Previous Year Question Paper for B.Tech Semester 8, academic session 2021-22. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech

Semester:Semester 8

Session:2021-22

University:AKTU / UPTU

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Questions Asked in 2021-22

Modeling Of Field Effect Nano Devices (KOE095) — complete question paper

Section AAttempt All of the following Questions in brief Marks (10X2=20) CO

a
What is a nano-device?
c
What do you mean by transistor?
g
What is a VT device?
h
Explain RF circuit. Q1(i) What do you mean by semiconductor? Q1(j) What is a gate stack?

Section BAttempt ANY THREE of the following Questions Marks (3X10=30) CO

a
What do you mean by MOSFET? Discuss the MOSFET scaling in detail?
b
Define electrostatics. Discuss 1D and 2d MOS electrostatics in detail
c
Write a note on the Carbon nanotube
d
What is ballistic nano transistor? Discuss a general modal for ballistic nano transistor
e
What is the impact of device performance on digital circuits? Discuss

Section CAttempt ANY ONE following Question Marks (1X10=10) CO

a
What are multi gate transistors? Discuss any two types of such transistors with their applications
b
Discuss the concept of quantum effects in detail

Section CAttempt ANY ONE following Question Marks (1X10=10) CO

a
What do you understand by asymmetry effect? Discuss in detail
b
Explain the following: (i) Double gate MOS system., (ii) Scattering

Section CAttempt ANY ONE following Question Marks (1X10=10) CO

a
Write the note on the following: (i) Evaluation of I-V characteristics., (ii) Band structure of Graphene
b
What do you understand by single electron charging? Discuss in detail

Section CAttempt ANY ONE following Question Marks (1X10=10) CO

a
Discuss about the Radiation effects in SOI MOSFETs
b
Explain the following: (i) Scaling effects. (ii) FET’s

Section CAttempt ANY ONE following Question Marks (1X10=10) CO

a
Write a note on the SRAM design with detail diagram
b
(i) Explain operational amplifier. (ii) Successive approximation DAC

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.

Repeated Questions — KOE095

Questions that appeared in more than one session, found by comparing 4 years of Modeling Of Field Effect Nano Devices papers (2021-22, 2022-23, 2023-24, 2024-25)

Write a note on the Carbon nanotube

Appeared in: 2021-22 · 2024-25

What is ballistic nano transistor? Discuss a general modal for ballistic nano transistor