B.TechSemester 52025-26Vlsi TechnologyBEC054
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Vlsi Technology (BEC054) - AKTU Question Paper 2025-26

B.Tech · Semester 5 · Free PDF Download

This is the official AKTU Vlsi Technology Previous Year Question Paper for B.Tech Semester 5, academic session 2025-26. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech
Semester:Semester 5
Session:2025-26
University:AKTU / UPTU

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Questions Asked in 2025-26

Vlsi Technology (BEC054) — extracted question text · 70 marks · 3 Hours

Section AAttempt all q u e s t i o n s i n b r i e f . 2 x 07 = 14
  • b
    Name two chemicals commonly u sed in wet cleaning
  • c
    State any two advantages of m olecular beam epitaxy
  • e
    Mention two disadvantage of wet etching
  • f
    State Fick’s second law of diffusion
  • g
    Write an advantage of sputte ring over evaporation in metallization
Section BAttempt any three o f t h e f o l l o w i n g : 07 x 3 = 07
  • a
    Describe dry cleaning techniques for silicon wafers, highlig hting the differences from wet cleaning methods
  • b
    Explain the process of Silic on on Insulator formation using the SIMOX technique
  • c
    Discuss the working principle of electron beam lithography w ith a proper diagram
  • d
    Explain the principle of ion implantation and its advantages over conventional diffusion techniques
  • e
    Explain CMOS fabrication steps in detail?
Section CAttempt any one p a r t o f t h e f o l l o w i n g : 07 x 1 = 07
  • a
    Explain the Czochralski (CZ) crystal growth process. Discuss i t s importance in producing electronic-grade silicon for IC fabrication
  • b
    Describe a complete workflow s tarting from silicon crystal growth to a cleaned wafer ready for IC fabrication
  • a
    Explain the principle of Vapor-Phase Epitaxy (VPE) and discu ss its advantages and limitations
  • b
    Describe Deal-Grove mod el of oxidation in detail
  • a
    What are the requirements of a photoresist? Which photoresis t is preferred for better resolution and why?
  • b
    Describe the deposition process of polysilicon films . Compare low- pressure CVD (LPCVD) and plasma-enhanced CVD (PECVD) methods
  • a
    Derive the diffusion equation. How the depth of diffusion is controlled during diffusion process?
  • b
    Compare solid, liquid, and gaseous sources for impurity diff usion in silicon
  • a
    Explain the need for packaging in VLSI devices. How does pac kaging affect the performance and reliability of ICs?
  • b
    Write a short note on
  • 1
    Package Fabrication Technologies

Question text is extracted from the official AKTU question paper PDF above. Check the original PDF for equations, diagrams and complete wording. Extracted: 2026-08-23.

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