B.TechSemester 52022-23Vlsi TechnologyKEC053
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Vlsi Technology (KEC053) - AKTU Question Paper 2022-23

B.Tech · Semester 5 · Free PDF Download

This is the official AKTU Vlsi Technology Previous Year Question Paper for B.Tech Semester 5, academic session 2022-23. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech
Semester:Semester 5
Session:2022-23
University:AKTU / UPTU

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Questions Asked in 2022-23

Vlsi Technology (KEC053) — extracted question text

Section AAttempt all questions in brief. 2 x 10 = 20
  • a
    What does Moore’s law state?
  • b
    List two major defect that a ppear in crystal structure
  • d
    What is auto doping?
  • e
    What are PR materials?
  • f
    Name photo masking technique commonly used
  • g
    What is diffusion fu rnace importance?
  • h
    What type of gaseous source commonly used in diffusion? i. What is sputtering? j. What is ohmic contact in VLSI?
Section BAttempt any three of the following: 10 x 3 = 30
  • a
    With diagram explain the CZ process for crystal growth
  • b
    Explain about Molecular beam epitaxial process with block diagram
  • c
    Briefly explain Electron Beam Lithography? List its importance
  • d
    Explain the Ion implantation technique in IC fabrication with neat diagram
  • e
    Explain how packaging can be achieved in VLSI for IC
Section CAttempt any one part of the following: 10 x 1 = 10
  • a
    Explain importance of wafer c leaning technology? Explain its type?
  • b
    Explain various processing consideration while design an IC?
  • a
    Explain with a diagram Vapor Phase Epitaxy?
  • b
    Calculate the oxidation time required for the thermal oxidat ion of 100 A and 5000 A thickness at 1000 0C. Note B = 5.2x105 A2/min and B/A = 111 A/min
  • a
    List all process steps of p attern transfer with diagram
  • b
    What are the requirements of a photoresist? Which photoresis t is preferred for better resolution and why?
  • a
    Derive the diffusion equation. How the depth of diffusion is controlled during diffusion process? Give the solution of Fick’s Law?
  • b
    How the impurity concentrati on and junction depth are indepe ndently controlled in an ion implantation process
  • a
    Explain the metallization and describe the problems associat ed with this process. Explain dc sputtering method of metallization?
  • b
    Explain CMOS fabrication steps in detail?

Question text is extracted from the official AKTU question paper PDF above. Check the original PDF for equations, diagrams and complete wording. Extracted: 2026-08-23.

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