B.TechSemester 52025-26Vlsi TechnologyBEC054

Vlsi Technology (BEC054) - AKTU Question Paper 2025-26

B.Tech · Semester 5 · Free PDF Download

This is the official AKTU Vlsi Technology Previous Year Question Paper for B.Tech Semester 5, academic session 2025-26. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech

Semester:Semester 5

Session:2025-26

University:AKTU / UPTU

Rate this paper

Questions Asked in 2025-26

Vlsi Technology (BEC054) — complete question paper · 70 marks · 3 Hours

Section AAttempt all q u e s t i o n s i n b r i e f . 2 x 07 = 14

b
Name two chemicals commonly u sed in wet cleaning
c
State any two advantages of m olecular beam epitaxy
e
Mention two disadvantage of wet etching
f
State Fick’s second law of diffusion
g
Write an advantage of sputte ring over evaporation in metallization

Section BAttempt any three o f t h e f o l l o w i n g : 07 x 3 = 07

a
Describe dry cleaning techniques for silicon wafers, highlig hting the differences from wet cleaning methods
b
Explain the process of Silic on on Insulator formation using the SIMOX technique
c
Discuss the working principle of electron beam lithography w ith a proper diagram
d
Explain the principle of ion implantation and its advantages over conventional diffusion techniques
e
Explain CMOS fabrication steps in detail?

Section CAttempt any one p a r t o f t h e f o l l o w i n g : 07 x 1 = 07

a
Explain the Czochralski (CZ) crystal growth process. Discuss i t s importance in producing electronic-grade silicon for IC fabrication
b
Describe a complete workflow s tarting from silicon crystal growth to a cleaned wafer ready for IC fabrication
a
Explain the principle of Vapor-Phase Epitaxy (VPE) and discu ss its advantages and limitations
b
Describe Deal-Grove mod el of oxidation in detail
a
What are the requirements of a photoresist? Which photoresis t is preferred for better resolution and why?
b
Describe the deposition process of polysilicon films . Compare low- pressure CVD (LPCVD) and plasma-enhanced CVD (PECVD) methods
a
Derive the diffusion equation. How the depth of diffusion is controlled during diffusion process?
b
Compare solid, liquid, and gaseous sources for impurity diff usion in silicon
a
Explain the need for packaging in VLSI devices. How does pac kaging affect the performance and reliability of ICs?
b
Write a short note on
1
Package Fabrication Technologies

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.

Repeated Questions — BEC054

Questions that appeared in more than one session, found by comparing 2 years of Vlsi Technology papers (2024-25, 2025-26)

Write an advantage of sputte ring over evaporation in metallization

Appeared in: 2024-25 · 2025-26

Vlsi Technology — Other Year Papers

AKTU Vlsi Technology PYQs from other sessions

Vlsi Technology2021-22 Vlsi Technology2022-23 Vlsi Technology2023-24 Vlsi Technology2024-25

More B.Tech Semester 5 (2025-26) Papers

Other subjects from same semester and session

Machine Design2025-26 Essence Of Indian Traditional Knowledge2025-26 Cloud Computing2025-26 Design And Analysis Of Algorithm2025-26 Constitution Of India2025-26 Database Management System2025-26 I C Engines Fuels Lubrication2025-26 Artificial Intelligence2025-26

View all B.Tech Semester 5 2025-26 papers →

Syllabus & More PYQs

Paper solve karne se pehle unit-wise syllabus dekh lo

AKTU 3rd Year PYQs — All Branches