B.TechSemester 52024-25Vlsi TechnologyBEC054
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Vlsi Technology (BEC054) - AKTU Question Paper 2024-25

B.Tech · Semester 5 · Free PDF Download

This is the official AKTU Vlsi Technology Previous Year Question Paper for B.Tech Semester 5, academic session 2024-25. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech
Semester:Semester 5
Session:2024-25
University:AKTU / UPTU

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Questions Asked in 2024-25

Vlsi Technology (BEC054) — complete question paper · 70 marks · 3 Hours

Section AAttempt all questions in brief. 2 x 07 = 14
  • b
    Differentiate between homo epitaxy and hetero epitaxy. CO
  • c
    List the Figures of Merit i n photolithographic process. CO
  • d
    Name the etchant commonly used to remove Silicon. CO
  • e
    Name any two solid sources for n-type dopant sources. CO
  • f
    Write the advantage of using Aluminium in metallization. CO
  • g
    Define throu ghput for IC fabrication. CO
Section BAttempt any three of the following: 07 x 3 = 21
  • a
    Compare FZ and CZ Technique f or crystal growth. Explain evaluation of crystal
  • b
    Explain the basic transport processes and reaction kinetics of Vapor Phase Epitaxy
  • c
    Define photolithography. Discuss the steps of mask generatio n with diagram
  • d
    Explain Models for Diffusion in Solids. Also explain Fick’s I Law of Diffusion
  • e
    Write short notes on (i) Sput tering (ii) Applications of Metallization CO
Section CAttempt any one part of the following: 07 x 1 = 07
  • a
    Explain the different steps i nvolved in shaping of Silicon wafers. CO
  • b
    Why Oxidation is necessary in IC fabrication? Compare High p ressure oxidation and Plasma oxidation
  • a
    Explain Molecular Beam Epitaxy with diagram. Also discuss th e advantages and disadvantages of Molecular Beam Epitaxy
  • b
    Write short notes on (i) Pre- oxidation Cleaning (ii)Wet Oxidation CO
  • a
    Explain the deposition methods and deposition variables for Silicon Dioxide. Explain step coverage problem in Silicon Dioxide deposition
  • b
    Write short notes on (i) Wet Et ching (ii) Projection Printing CO
  • a
    Explain the ion-implantation technique with diagram of equip ment. Discuss the advantages and disadvantages of ion-implantation
  • b
    Derive an expression for complementary error function (erfc) diffusion profile
  • a
    Explain CMOS fabrication pro cess sequence using twin-well technology with diagrams
  • b
    What is the need of packaging in VLSI? Discuss Packaging Des ign considerations in VLSI

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.

Repeated Questions — BEC054

Questions that appeared in more than one session, found by comparing 2 years of Vlsi Technology papers (2024-25, 2025-26)

2x

Write the advantage of using Aluminium in metallization. CO

Appeared in: 2024-25 · 2025-26

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