B.TechSemester 32022-23Electronic DevicesKEC-301

Electronic Devices (KEC-301) - AKTU Question Paper 2022-23

B.Tech · Semester 3 · Free PDF Download

This is the official AKTU Electronic Devices Previous Year Question Paper for B.Tech Semester 3, academic session 2022-23. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech

Semester:Semester 3

Session:2022-23

University:AKTU / UPTU

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Questions Asked in 2022-23

Electronic Devices (KEC-301) — complete question paper

Section AAttempt all questions in brief. 2 x 10 = 20

a
Classify the materials on the b asis of energy band gap theory
b
State the de Broglie principle of duality
c
Define sheet resistance
d
Differentiate between drift and diffusion current
e
Draw the I-V characteristics of pn junction diode
f
Define the depletion region in a pn junction
g
Draw the input and output char acteristics of BJT in CE configuration
h
Determine the current gain β in CE configuration of BJT, if =0.98. (i) Draw the small signal m odel of NMOS transistor. (j) Explain the photovoltaic effect

Section BAttempt any three of the following: 10x3=30

a
What do you mean by effective mass of electron? Derive the rela tion between effective mass and curvature of energy band
b
A Si sample is doped with 10 17arsenic (AS) atoms / cm 3. Calculate the equilibrium concentration of electrons and holes at 300K. What is the posit io n o f f e r m i l e v e l (EF) relative to intrinsic energy level (Ei)? Also draw the energy band diagram showing the position of fermi level and intrinsic energy level. Given that intrinsic carrier concentration (ni)for Si is 1.5×1010 / cm3
c
Using the concept of drift and diffusion of carriers, derive the continuity equation
d
Explain Zener and Avalanche breakdown in detail
e
Write short note on following- (i) LED (ii) Solar cell

Section CAttempt any one part of the following: 10x1=10

a
Derive the time dependent and time independent Schrodinger wave equation
b
Differentiate between direct and indirect band gap semiconductors. Also discuss the variation of energy band with alloy composition
a
Define Fermi-Dirac distribution function. Discuss the temperature dependence of Fermi-Dirac distribution function for semiconductor material
b
Derive the Einstein’s relation for electron
a
Derive the expression of depletion width in a p-n junction
b
Consider a Si abrupt p-n junction at 300K with N a = 1018 / cm3 and Nd = 1015 / cm3. Determine the value of contact potential and width of depletion region. Given that intrinsic carrier concentration (n i)for Si is 1.5×10 10 / cm3 and dielectric constant (K) for Si is 11.8
a
Discuss Schottky diode in detail and write its application
b
Draw and illustrate the Ebers-Moll model of BJT
a
Explain the accumulation mode, de pletion mode and inversion mod e with energy band diagram for a MOS capacitor
b
Explain the construction and working of N channel Enhancement type MOSFET and draw its drain characteristics and transfer characteristics

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.