B.TechSemester 32023-24Electronic DevicesBEC301

Electronic Devices (BEC301) - AKTU Question Paper 2023-24

B.Tech · Semester 3 · Free PDF Download

This is the official AKTU Electronic Devices Previous Year Question Paper for B.Tech Semester 3, academic session 2023-24. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech

Semester:Semester 3

Session:2023-24

University:AKTU / UPTU

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Questions Asked in 2023-24

Electronic Devices (BEC301) — complete question paper · 70 marks · 3 Hours

Section AAttempt all q u e s t i o n s i n b r i e f .

a
Discuss thermal Equilibrium Condition. 2
b
Illustrate the energy band diagram for PN junction in reverse mode. 2
c
A transistor has an α of 0.98. Determine the value of β. 2
d
Illustrate Electroluminescence. 2
e
State the de Broglie principle of duality. 2
f
Write properties of MOS capacitor. 2
g
Differentiate between drift and diffusion current. 2

Section BAttempt any three o f t h e f o l l o w i n g :

a
Explain photoelectric effect. justify how this effect verifi es the particle nature of light. 7
b
Illustrate Intrinsic and Extrinsic Semiconductor in detail. 7
c
Explain the small signal model of PN-Junction Diode 7
d
Describe stability factor and explain how it affect the tran sistor biasing. 7
e
Explain the C-V Characteristic of MOS Transistor. 7

Section CAttempt any one p a r t o f t h e f o l l o w i n g :

a
Discuss Application of Schrödi nger wave equation for infinit e Potential well and discuss the effect of various in relation to the energy of the particle
b
Illustrate the concept of allowed and forbidden energy bands in a single crystal both qualitatively and more rigorously from the results of using the Kronig–Penney model
a
Define the term Doping. Explain the effect of Impurity on en ergy band gap Diagram in detail
b
Using the concept of drift and diffusion of carriers, derive the continuity equation. 7
a
Describe the importance of E instein relation and prove the relation. 7
b
Derive the relation of volta ge and current for PN junction diode. 7
a
Explain Ebers-Moll model for PNP transistor. 7
b
Name the different biasing schemes used transistor biasing. Explain voltage divider biasing in detail
a
Explain various biasing schemes for JFET. 7
b
Explain Enhancement P channel MOSFET in detail. Draw and ela borate the drain Characteristic

Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.

Repeated Questions — BEC301

Questions that appeared in more than one session, found by comparing 2 years of Electronic Devices papers (2023-24, 2025-26)

Using the concept of drift and diffusion of carriers, derive the continuity equation. 7

Appeared in: 2023-24 · 2025-26

Electronic Devices — Other Year Papers

AKTU Electronic Devices PYQs from other sessions

Electronic Devices2022-23 Electronic Devices2025-26 Electronic Devices2021-22

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Syllabus & More PYQs

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📘 Electronic Devices — Unit-wise SyllabusBEC301 AKTU 2nd Year Syllabus AKTU 2nd Year PYQs — All Branches ECE 2nd Year Syllabus ELECTRONICS COMPUTER ENGG 2nd Year Syllabus