B.TechSemester 32023-24Electronic DevicesBEC301
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Electronic Devices (BEC301) - AKTU Question Paper 2023-24

B.Tech · Semester 3 · Free PDF Download

This is the official AKTU Electronic Devices Previous Year Question Paper for B.Tech Semester 3, academic session 2023-24. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.

Course:B.Tech
Semester:Semester 3
Session:2023-24
University:AKTU / UPTU

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Questions Asked in 2023-24

Electronic Devices (BEC301) — extracted question text · 70 marks · 3 Hours

Section AAttempt all q u e s t i o n s i n b r i e f .
  • a
    Discuss thermal Equilibrium Condition. 2
  • b
    Illustrate the energy band diagram for PN junction in reverse mode. 2
  • c
    A transistor has an α of 0.98. Determine the value of β. 2
  • d
    Illustrate Electroluminescence. 2
  • e
    State the de Broglie principle of duality. 2
  • f
    Write properties of MOS capacitor. 2
  • g
    Differentiate between drift and diffusion current. 2
Section BAttempt any three o f t h e f o l l o w i n g :
  • a
    Explain photoelectric effect. justify how this effect verifi es the particle nature of light. 7
  • b
    Illustrate Intrinsic and Extrinsic Semiconductor in detail. 7
  • c
    Explain the small signal model of PN-Junction Diode 7
  • d
    Describe stability factor and explain how it affect the tran sistor biasing. 7
  • e
    Explain the C-V Characteristic of MOS Transistor. 7
Section CAttempt any one p a r t o f t h e f o l l o w i n g :
  • a
    Discuss Application of Schrödi nger wave equation for infinit e Potential well and discuss the effect of various in relation to the energy of the particle
  • b
    Illustrate the concept of allowed and forbidden energy bands in a single crystal both qualitatively and more rigorously from the results of using the Kronig–Penney model
  • a
    Define the term Doping. Explain the effect of Impurity on en ergy band gap Diagram in detail
  • b
    Using the concept of drift and diffusion of carriers, derive the continuity equation. 7
  • a
    Describe the importance of E instein relation and prove the relation. 7
  • b
    Derive the relation of volta ge and current for PN junction diode. 7
  • a
    Explain Ebers-Moll model for PNP transistor. 7
  • b
    Name the different biasing schemes used transistor biasing. Explain voltage divider biasing in detail
  • a
    Explain various biasing schemes for JFET. 7
  • b
    Explain Enhancement P channel MOSFET in detail. Draw and ela borate the drain Characteristic

Question text is extracted from the official AKTU question paper PDF above. Check the original PDF for equations, diagrams and complete wording. Extracted: 2026-08-23.

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