Electronic Devices (BEC301) - AKTU Question Paper 2025-26
B.Tech · Semester 3 · Free PDF Download
This is the official AKTU Electronic Devices Previous Year Question Paper for B.Tech Semester 3, academic session 2025-26. Published by Dr. A.P.J. Abdul Kalam Technical University (AKTU/UPTU), Lucknow. Free PDF download — no login required.
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Questions Asked in 2025-26
Electronic Devices (BEC301) — complete question paper · 70 marks · 3 Hours
- aWhat is the Fermi level, and how does it relate to the electro nic properties of a material?
- bDefine effective mass of an electron. 2 1
- cD i f f e r e n t i a t e b e t w e e n d r i f t c u rrent and diffusion current in a semiconductor
- dDefine Mobility. Write relati on between drift velocity and mobility. 2 2
- eWrite difference between Avala nche and Zener breakdown. 2 3
- fWhat is a photodiode? 2 3
- gWhy BJT is called as current controlled device? 2 4
- aEstablish the relation between Energy and Wave vector (K) an d draw & explain the E-K diagram for di rect band semiconductor and indir ect band semiconductor
- bUsing the concept of drift and diffusion of carriers, derive Einstein’s relation
- cHow a PN junction diode is working? Draw and explain V-I characteristics of PN diode with neat diagrams
- dDraw and illustrate the Eb ers-Moll model of BJT. 10 4
- eExplain the construction and principle of operation of N-cha nnel JFET. Draw its drain and transfer characteristics
- aDerive the time dependent and time independent Schrodinger w ave equation
- bWhat is the Heisenberg Uncerta inty Principle, and how does i t relate to the measurement of complementary observables?
- aCalculate the fermi level position in Si containing 10 17 As atoms/cm3 at 300 K assuming 50% of the impuri ties are ionized at this temper ature. Also calculate the equilibrium electron and holes concentrations & Draw the resulting band diagram
- bExplain generation and recomb ination of carriers in semiconductors. 10 2
- aDerive the expression of depletion width in a p-n junction. 10 3
- bDescribe the construction, w orking principle, and characteri stics of the following devices
- bLi ght Emitting Diode (LED)
- aDetermine the Q-point values of I C and V CE for the circuit in Figure. Assume VCE = 8 V, RB = 360 kΩ and R C = 2 kΩ. Also Construct the dc load line and plot the Q-point
- bDraw and explain the input and output I–V characteristics of a B J T i n Common Emitter configuration
- aDefine MOS capacitor and explain its basic structure. 10 5
- bExplain the Construction, Wor king and Characteristics of n-C hannel Enhancement Type MOSFET
Question text is extracted from the official AKTU question paper PDF above. Hindi translations are omitted — every question is printed in English in the original paper. Last verified: 2026-08-23.
Repeated Questions — BEC301
Questions that appeared in more than one session, found by comparing 2 years of Electronic Devices papers (2023-24, 2025-26)
Using the concept of drift and diffusion of carriers, derive Einstein’s relation
Appeared in: 2023-24 · 2025-26
Electronic Devices — Other Year Papers
AKTU Electronic Devices PYQs from other sessions
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Syllabus & More PYQs
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